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Proceedings Paper

Multiwafer production of epitaxy ready 4" GaSb substrates: requirements for epitaxially growth infrared detectors
Author(s): Mark J. Furlong; Rebecca Martinez; Sasson Amirhaghi; Brian Smith; Andrew Mowbray
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Paper Abstract

In this paper we describe the crystal growth and surface characterisation of ultra-flat 4" GaSb substrates suitable for the epitaxial deposition of advanced infrared detectors. Results will be presented on the production of single crystal 4" GaSb ingots grown by a modified version of the liquid encapsulated Czochralski (LEC) technique , supported by the analysis of bulk material quality by dislocation Etch Pit Density (EPD) and X-Ray topography (XRT) assessments. This study will also describe how various techniques were used to characterize the quality of the bare substrate. Surface oxide properties of the GaSb substrates will be characterized by spectroscopic ellipsometry (SE). Bow, Warp and Total Thickness Variation (TTV) data will be presented for 4" wafers processed on a multiwafer-type polishing platform. This study will conclude with a 'blueprint' for the manufacture of large diameter GaSb substrates, this defining the requirements for the production use of GaSb within a commercial epitaxial wafer foundry.

Paper Details

Date Published: 20 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826818 (20 January 2012); doi: 10.1117/12.908303
Show Author Affiliations
Mark J. Furlong, Wafer Technology Ltd. (United Kingdom)
Rebecca Martinez, Wafer Technology Ltd. (United Kingdom)
Sasson Amirhaghi, Wafer Technology Ltd. (United Kingdom)
Brian Smith, Wafer Technology Ltd. (United Kingdom)
Andrew Mowbray, Wafer Technology Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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