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Proceedings Paper

Fabrication of photo-induced microstructure embedded inside ZnO crystal
Author(s): Yuichiro Ishikawa; Yasuhiko Shimotsuma; Akio Kaneta; Masaaki Sakakura; Masayuki Nishi; Kiyotaka Miura; Kazuyuki Hirao; Yoichi Kawakami
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Paper Abstract

In this paper, micromachining inside of direct and indirect semiconductor, such as zinc oxide crystal (ZnO) and single-crystalline silicon(c-Si) using femtosecond laser pulses is successfully demonstrated. In the case of ZnO, oxygen vacancy or interstitial zinc was three-dimensionally induced by the near-infrared femtosecond laser pulse irradiation. The threshold energy for oxygen defect formation increased with increasing in a pulse width. The mechanism of the pulsewidth dependence of the damage threshold inside ZnO could be interpreted in terms of the excitonic Mott transition to the electron-hole plasma which depends on the electron plasma density induced by the laser irradiation. We have also successfully micromachined inside c-Si using infrared ultrashort laser pulses (λ = 1.24 μm). Optical microscope observation under an infrared lamp illumination indicates low density material or scattering structure was formed in the vicinity of the focal spot.

Paper Details

Date Published: 16 February 2012
PDF: 7 pages
Proc. SPIE 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII, 82430N (16 February 2012); doi: 10.1117/12.908190
Show Author Affiliations
Yuichiro Ishikawa, Kyoto Univ. (Japan)
Yasuhiko Shimotsuma, Kyoto Univ. (Japan)
Akio Kaneta, Kyoto Univ. (Japan)
Masaaki Sakakura, Kyoto Univ. (Japan)
Masayuki Nishi, Kyoto Univ. (Japan)
Kiyotaka Miura, Kyoto Univ. (Japan)
Kazuyuki Hirao, Kyoto Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 8243:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII
Guido Hennig; Xianfan Xu; Bo Gu; Yoshiki Nakata, Editor(s)

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