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Proceedings Paper

Optical properties of fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures
Author(s): Y. M. Kim; D. Sleiter; K. Sanaka; Y. Yamamoto; J. Meijer; K. Lischka; A. Pawlis
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Paper Abstract

Here we demonstrate the ion-implantation of fluorine as an alternative doping method for ZnMgSe/ZnSe QWs. The photoluminescence measurements of F-implanted ZnSe QWs show the correlation between the number of sharp recombination peaks of F-donor bound-excitons and the implantation dose as well as the saturation of the luminescence intensity related to a donor. When special techniques such as selective implantation through a mask and registration of single ion impacts are applied on micro-, nano-cavities, the ion implantation can be an attractive alternative fluorine doping method for quantum information technology based on fluorine impurities in ZnSe.

Paper Details

Date Published: 23 February 2012
PDF: 6 pages
Proc. SPIE 8272, Advances in Photonics of Quantum Computing, Memory, and Communication V, 827213 (23 February 2012); doi: 10.1117/12.908173
Show Author Affiliations
Y. M. Kim, Univ. Paderborn (Germany)
D. Sleiter, Stanford Univ. (United States)
K. Sanaka, Stanford Univ. (United States)
National Institute of Informatics (Japan)
Y. Yamamoto, Stanford Univ. (United States)
National Institute of Informatics (Japan)
J. Meijer, Ruhr-Univ. Bochum (Germany)
K. Lischka, Univ. Paderborn (Germany)
A. Pawlis, Univ. Paderborn (Germany)
Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 8272:
Advances in Photonics of Quantum Computing, Memory, and Communication V
Zameer Ul Hasan; Philip R. Hemmer; Hwang Lee; Charles M. Santori, Editor(s)

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