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Proceedings Paper

Improvement of temperature stability in columnar quantum dots by introducing side barriers with larger bandgap energy for semiconductor optical amplifiers
Author(s): Nami Yasuoka; Shigekazu Okumura; Hiroji Ebe; Yu Tanaka; Mutsuri Ekawa; Yoshiaki Nakata; Mitsuru Sugawara; Yasuhiko Arakawa
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Paper Abstract

We have investigated the temperature dependence of InAs columnar quantum dots (CQDs) surrounded by InGaAsP barriers with different bandgap energies toward high-temperature performance for semiconductor optical amplifiers. It was found that larger bandgap energy in InGaAsP side barriers enabled to increase the quasi-Fermi level (F) separation between the conduction and valence bands from theory. We have fabricated two types of CQD-SOAs with different side barrier energies and compared temperature characteristics. Decrease in the material gains for CQD with a larger side barrier bandgap was suppressed by 20% with increasing temperature from 25 °C to 85 °C.

Paper Details

Date Published: 23 February 2012
PDF: 7 pages
Proc. SPIE 8271, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX, 82710S (23 February 2012); doi: 10.1117/12.907958
Show Author Affiliations
Nami Yasuoka, Fujitsu Labs., Ltd. (Japan)
Photonics Electronics Technology Research Association (Japan)
Shigekazu Okumura, Fujitsu Labs., Ltd. (Japan)
Photonics Electronics Technology Research Association (Japan)
Hiroji Ebe, Fujitsu Labs., Ltd. (Japan)
Yu Tanaka, Fujitsu Labs., Ltd. (Japan)
Photonics Electronics Technology Research Association (Japan)
Mutsuri Ekawa, Fujitsu Labs., Ltd. (Japan)
Yoshiaki Nakata, Fujitsu Labs., Ltd. (Japan)
Mitsuru Sugawara, QD Laser Inc. (Japan)
Yasuhiko Arakawa, Institute for Nano Quantum Information Electronics (Japan)
The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 8271:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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