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Proceedings Paper

Increase in photoluminescence intensity of InAs columnar quantum dots on InP(001) substrate by increasing indium and phosphorous composition in InGaAsP barrier layers
Author(s): Shigekazu Okumura; Nami Yasuoka; Kenichi Kawaguchi; Yu Tanaka; Mitsuru Ekawa
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Paper Abstract

We investigated the effect of the alloy composition of InGaAsP barrier layers on the photoluminescence (PL) properties of InAs columnar quantum dots (CQDs) grown by metal organic vapor phase epitaxy (MOVPE). The PL wavelength of the CQDs was controlled by the strain of the InGaAsP barrier layers for fixed bandgap wavelength conditions. The PL intensity of the CQDs showed significant increase with the bandgap energy of the barrier layers, that is, with increasing indium and phosphorus composition, due to the reduced defects and dislocation in the samples. The result is considered to be related to the miscibility of the InGaAsP quaternary alloy at a low growth temperature. By applying a larger bandgap energy to the barrier layers, triple-stacked CQDs with high crystalline quality was demonstrated in the 1.55-μm region.

Paper Details

Date Published: 23 February 2012
PDF: 8 pages
Proc. SPIE 8271, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX, 82710R (23 February 2012); doi: 10.1117/12.907954
Show Author Affiliations
Shigekazu Okumura, Photonics Electronics Technology Research Association (Japan)
Fujitsu Ltd. (Japan)
Nami Yasuoka, Photonics Electronics Technology Research Association (Japan)
Fujitsu Ltd. (Japan)
Kenichi Kawaguchi, Fujitsu Labs., Ltd. (Japan)
Yu Tanaka, Photonics Electronics Technology Research Association (Japan)
Fujitsu Ltd. (Japan)
Mitsuru Ekawa, Fujitsu Labs., Ltd. (Japan)


Published in SPIE Proceedings Vol. 8271:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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