Share Email Print
cover

Proceedings Paper

Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy
Author(s): Pinar Dogan; Oliver Brandt; Christian Hauswald; Raffaella Calarco; Achim Trampert; Lutz Geelhaar; Henning Riechert
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

GaN nanowires are grown on Si(111) as templates for pendeoepitaxial coalescence overgrowth under different V/III ratios by molecular beam epitaxy. The degree of coalescence in the nanowire template increases with decreasing V/III ratio or doping with Mg. The morphology of the GaN nanowire template strongly influences that of the pendeoepitaxial layer after coalescence as well as its optical quality.

Paper Details

Date Published: 28 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620P (28 February 2012); doi: 10.1117/12.907817
Show Author Affiliations
Pinar Dogan, Paul-Drude-Institut für Festkörperelektronik (Germany)
Oliver Brandt, Paul-Drude-Institut für Festkörperelektronik (Germany)
Christian Hauswald, Paul-Drude-Institut für Festkörperelektronik (Germany)
Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik (Germany)
Achim Trampert, Paul-Drude-Institut für Festkörperelektronik (Germany)
Lutz Geelhaar, Paul-Drude-Institut für Festkörperelektronik (Germany)
Henning Riechert, Paul-Drude-Institut für Festkörperelektronik (Germany)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top