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Proceedings Paper

Oxygen sensors made by monolayer graphene
Author(s): S. C. Hung; C. W. Chen; M. D. Yang; C. W. Yeh; C. H. Wu; G. C. Chi; R. Fan; S. J. Pearton
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Paper Abstract

The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cm×1cm will attach O2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O2 concentration and the detection limit of the simple O2 sensor was 1.25% in volume ratio.

Paper Details

Date Published: 20 January 2012
PDF: 13 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826822 (20 January 2012); doi: 10.1117/12.907768
Show Author Affiliations
S. C. Hung, National Central Univ. (Taiwan)
C. W. Chen, National Central Univ. (Taiwan)
M. D. Yang, Institute of Nuclear Energy Research (Taiwan)
C. W. Yeh, Institute of Nuclear Energy Research (Taiwan)
C. H. Wu, Institute of Nuclear Energy Research (Taiwan)
G. C. Chi, National Chiao Tung Univ. (Taiwan)
R. Fan, Univ. of Florida (United States)
S. J. Pearton, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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