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Proceedings Paper

Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light
Author(s): Taiki Nakazawa; Rihito Kuroda; Yasumasa Koda; Shigetoshi Sugawa
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Paper Abstract

In this work, n+pn-type photodiodes with various surface n+ layer profiles formed on the atomically flat Si surface were evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UVlight wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at Si/SiO2 system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity and a high stability to UV-light is proposed.

Paper Details

Date Published: 15 February 2012
PDF: 8 pages
Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980M (15 February 2012); doi: 10.1117/12.907727
Show Author Affiliations
Taiki Nakazawa, Tohoku Univ. (Japan)
Rihito Kuroda, Tohoku Univ. (Japan)
Yasumasa Koda, Tohoku Univ. (Japan)
Shigetoshi Sugawa, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 8298:
Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII
Ralf Widenhorn; Valérie Nguyen; Antoine Dupret, Editor(s)

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