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Biaxial strain effects on the electronic band structure of wurtzite InxGa1-xN alloys using first-principles calculations
Author(s): Bo-Ting Liou; Bang-Yenn Wu; Yen-Kuang Kuo
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Paper Abstract

Numerical simulation based on first-principles calculations is applied to study the energy band structural characteristics and the band-gap properties of wurtzite InGaN. The results show that the direct band gap, the band gap bowing parameter, the width of valence band, and the width of top valence band increase with compressive strain and decrease with tensile strain. The biaxial strain effect on the indirect band gap is little. In general, there is a larger band gap bowing parameter and larger strain-induced band gap bowing variation in Ga-rich alloys. In addition, the direct band gap, the indirect band gap, the width of valence band, and the width of top valence band decrease with increase of indium composition. Wurtzite InGaN remains the characteristic of a direct band gap material under biaxial stress.

Paper Details

Date Published: 29 February 2012
PDF: 6 pages
Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 825520 (29 February 2012); doi: 10.1117/12.907701
Show Author Affiliations
Bo-Ting Liou, Hsiuping Univ. of Science and Technology (Taiwan)
Bang-Yenn Wu, De-Lin Institute of Technology (Taiwan)
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)

Published in SPIE Proceedings Vol. 8255:
Physics and Simulation of Optoelectronic Devices XX
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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