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Proceedings Paper

Free-standing a-plane GaN substrates grown by HVPE
Author(s): Yin-Hao Wu; Yen-Hsien Yeh; Kuei-Ming Chen; Yu-jen Yang; Wei-I Lee
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Paper Abstract

A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.

Paper Details

Date Published: 27 February 2012
PDF: 5 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621Z (27 February 2012); doi: 10.1117/12.907683
Show Author Affiliations
Yin-Hao Wu, National Chiao Tung Univ. (Taiwan)
Yen-Hsien Yeh, National Chiao Tung Univ. (Taiwan)
Kuei-Ming Chen, National Chiao Tung Univ. (Taiwan)
Yu-jen Yang, National Chiao Tung Univ. (Taiwan)
Wei-I Lee, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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