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Proceedings Paper

3.0-μm wavelength-tunable compact light source with 805/1064-nm differential frequency generation using intracavity photon reuse and spectrum shaping techniques
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Paper Abstract

Mid-infrared (mid-IR) light sources operating in the 3-μm waveband are useful photonic devices for the spectroscopic detection of trace gases and biomaterials. In order to achieve efficient mid-IR light emissions with a small footprint, we propose an attractive technique for developing a compact intracavity system that enables the reuse of the photons emitted by the pump source. Periodically poled congruent LiNbO3 (PPCLN) and Nd-YVO4 crystals were both set in the intracavity. An 805-nm waveband GaAs-based laser diode was used as the signal and pump light sources for differential frequency generation (DFG), since GaAs-based device technology enables the construction of high-power, highefficiency lasers operating in this waveband. We have successfully demonstrated that a 3-μm wavelength-tunable light source using the photon reuse technique is the most effective and compact intracavity system; it possesses useful broadband wavelength tunability characteristics up to approximately 90 nm and offers a small footprint (15 × 30 cm). We obtained high output power of the order of a few milliwatts from the developed light source. In addition, since the optical spectrum shape of the mid-IR light is also important, we propose a useful spectrum shaping technique using a Fabry-Perot (FP) etalon filter included in the intracavity system; we obtained a fine single-peak spectrum in the 3-μm waveband. The developed wavelength-tunable compact intracavity mid-IR light source using the photon reuse and spectrum shaping techniques is attractive for optical communications and biomedical applications.

Paper Details

Date Published: 15 February 2012
PDF: 6 pages
Proc. SPIE 8235, Solid State Lasers XXI: Technology and Devices, 823504 (15 February 2012); doi: 10.1117/12.907580
Show Author Affiliations
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan)
Kouichi Akahane, National Institute of Information and Communications Technology (Japan)
Tetsuya Kawanishi, National Institute of Information and Communications Technology (Japan)
Hideyuki Sotobayashi, Aoyama Gakuin Univ. (Japan)


Published in SPIE Proceedings Vol. 8235:
Solid State Lasers XXI: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)

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