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Proceedings Paper

20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm
Author(s): Jill D. Berger; Douglas W. Anthon; Andrea Caprara; Juan L. Chilla; Sergei V. Govorkov; Arnaud Y. Lepert; Wayne Mefferd; Qi-Ze Shu; Luis Spinelli
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Paper Abstract

Optically-pumped semiconductor (OPS) lasers are power-scalable, wavelength-flexible, infrared brightness converters. Adding intra-cavity frequency doubling turns them into efficient, low noise, high power visible laser sources. We report on a laser combining an InGaAs gain medium with an LBO nonlinear crystal to produce more than 20 Watt CW in single transverse mode at 532 nm. Efficient cooling of the single gain chip using advanced mounting techniques is the key to making the laser reliable at high CW powers. A rugged and compact package withstands significant environmental excursions. The laser's low noise makes it suitable for demanding Ti:Sapphire pumping applications.

Paper Details

Date Published: 14 February 2012
PDF: 7 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824206 (14 February 2012); doi: 10.1117/12.907511
Show Author Affiliations
Jill D. Berger, Coherent, Inc. (United States)
Douglas W. Anthon, Coherent, Inc. (United States)
Andrea Caprara, Coherent, Inc. (United States)
Juan L. Chilla, Coherent, Inc. (United States)
Sergei V. Govorkov, Coherent, Inc. (United States)
Arnaud Y. Lepert, Coherent, Inc. (United States)
Wayne Mefferd, Coherent, Inc. (United States)
Qi-Ze Shu, Coherent, Inc. (United States)
Luis Spinelli, Coherent, Inc. (United States)


Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)

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