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Proceedings Paper

Estimation of the recombination coefficients in aged InGaN laser diodes
Author(s): Lucja Marona; Szymon Grzanka; Robert Czernecki; Jakub Goss; Michal Bockowski; Piotr Perlin; Piotr Kruszewski; Mariusz Pluska; Andrzej Czerwinski
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Paper Abstract

We studied light-current characteristics in InGaN laser diode subjected to aging process. We observed anomalous behavior consisting in apparent increase of bimolecular recombination constant B. We proposed that the existence of a carrier escape mechanism proportional to N2 can fully account for this paradox. We show that it is possible to observe cathodoluminescence contrast in the degraded laser diodes. This contrast has uniform character through all the area of device. Our laser diodes are also characterized by deep defect center lying 0.82 eV below the conduction band minimum although we don't have yet a direct evidence of the existence of this level with device degradation.

Paper Details

Date Published: 28 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826217 (28 February 2012); doi: 10.1117/12.907404
Show Author Affiliations
Lucja Marona, Institute of High Pressure Physics (Poland)
Szymon Grzanka, Institute of High Pressure Physics (Poland)
Robert Czernecki, Institute of High Pressure Physics (Poland)
Jakub Goss, Institute of High Pressure Physics (Poland)
Michal Bockowski, Institute of High Pressure Physics (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
Piotr Kruszewski, Aix-Marseille Univ. (France)
CNRS, IM2NP (France)
Mariusz Pluska, Institute of Electron Technology (Poland)
Andrzej Czerwinski, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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