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Proceedings Paper

A novel single-transistor APS and its comparison with 3T CMOS image sensor
Author(s): Xin-Yan Liu; Xi Lin; Cheng-Wei Cao; Qing-Qing Sun; Paul-Chang Lin; Yi-Jun Bian; Cheng Xing; Peng-Fei Wang; David Wei Zhang
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Paper Abstract

A novel single-transistor configuration active pixel image sensor (APS) has been investigated in this paper. This device can realize the functions of the conventional 3T CMOS image sensor. In this paper, the basic performances including transient simulation, potential changes, and read endurance of the 1T image sensor will be discussed. Different from the conventional 3T CMOS image sensor, holes are used as signal charges in the proposed device. Comparison with the conventional 3T APS will be discussed as well.

Paper Details

Date Published: 28 February 2012
PDF: 9 pages
Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82551S (28 February 2012); doi: 10.1117/12.907186
Show Author Affiliations
Xin-Yan Liu, Fudan Univ. (China)
Xi Lin, Fudan Univ. (China)
Cheng-Wei Cao, Fudan Univ. (China)
Qing-Qing Sun, Fudan Univ. (China)
Paul-Chang Lin, Semiconductor Manufacturing International Corp. (China)
Yi-Jun Bian, Semiconductor Manufacturing International Corp. (China)
Cheng Xing, Semiconductor Manufacturing International Corp. (China)
Peng-Fei Wang, Fudan Univ. (China)
David Wei Zhang, Fudan Univ. (China)

Published in SPIE Proceedings Vol. 8255:
Physics and Simulation of Optoelectronic Devices XX
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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