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Proceedings Paper

Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga2O3 sacrificial layer
Author(s): R. H. Horng; D. S. Wuu; S. L. Ou; H. H. Hsueh
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Paper Abstract

GaN epilayer can be grown on sapphire substrate with a Ga2O3 sacrificial layer. It was employed for the epilayer transferring from sapphire substrate to Cu substrate using the chemical lift-off process application. The (-201) oriented β-Ga2O3 thin film was first deposited on the c-plane sapphire substrate, followed by the GaN growth via metalorganic vapor phase epitaxy under N2 and H2 environment in sequence. The crystal quality of GaN epilayer can be improved dramatically with the regrowth in a H2 ambient. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga2O3 sacrificial layer can be laterally etched out with a hydrofluoric solution. It is worthy to mention that the separated sapphire substrate can be cleaned and reused for LED epitaxial growth next time. It is benefiting the cost down for the LED fabrication and Green Photonics Development.

Paper Details

Date Published: 6 February 2012
PDF: 7 pages
Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82780Y (6 February 2012); doi: 10.1117/12.907177
Show Author Affiliations
R. H. Horng, National Chung Hsing Univ. (Taiwan)
D. S. Wuu, National Chung Hsing Univ. (Taiwan)
Da-Yeh Univ. (Taiwan)
S. L. Ou, National Chung Hsing Univ. (Taiwan)
H. H. Hsueh, National Chung Hsing Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8278:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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