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Proceedings Paper

Analytical modeling of mid-infrared silicon Raman lasers
Author(s): J. Ma; S. Fathpour
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Paper Abstract

Silicon photonics has significantly matured in the near-infrared (telecommunication) wavelength range with several commercial products already in the market. More recently, the technology has been extended into the mid-infrared (mid- IR) regime with potential applications in biochemical sensing, tissue photoablation, environmental monitoring and freespace communications. The key advantage of silicon in the mid-IR, as compared with near-IR, is the absence of twophoton absorption (TPA) and free-carrier absorption (FCA). The absence of these nonlinear losses would potentially lead to high-performance nonlinear devices based on Raman and Kerr effects. Also, with the absence of TPA and FCA, the coupled-wave equations that are usually numerically solved to model these nonlinear devices lend themselves to analytical solutions in the mid-IR. In this paper, an analytical model for mid-IR silicon Raman lasers is developed. The validity of the model is confirmed by comparing it with numerical solutions of the coupled-wave equations. The developed model can be used as a versatile and efficient tool for analysis, design and optimization of mid-IR silicon Raman lasers, or to find good initial guesses for numerical methods. The effects of cavity parameters, such as cavity length and facet reflectivities, on the lasing threshold and input-output characteristics of the Raman laser are studied. For instance, for a propagation loss of 0.5 dB/cm, conversion efficiencies as high as 56% is predicted. The predicted optimum cavity (waveguide) length at 2.0 dB/cm propagation loss is ~ 3.4 mm. The results of this study predict strong prospects for mid-IR silicon Raman lasers for the mentioned applications.

Paper Details

Date Published: 1 February 2012
PDF: 6 pages
Proc. SPIE 8264, Integrated Optics: Devices, Materials, and Technologies XVI, 82640B (1 February 2012); doi: 10.1117/12.907157
Show Author Affiliations
J. Ma, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
S. Fathpour, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)

Published in SPIE Proceedings Vol. 8264:
Integrated Optics: Devices, Materials, and Technologies XVI
Jean Emmanuel Broquin; Gualtiero Nunzi Conti, Editor(s)

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