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Proceedings Paper

Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes
Author(s): Piotr Perlin; Tomasz Czyszanowski; Lucja Marona; Szymon Grzanka; Anna Kafar; Szymon Stanczyk; Tadek Suski; Mike Leszczyński; Michal Boćkowski; Grzegorz Muzioł; Maciej Kuc; Robert Sarzała
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Paper Abstract

Highly n-doped GaN is a material of a reduced refractive index which may substitute AlGaN as a cladding layer in InGaN laser diodes. In this study we focus on the determination of the optical absorption and the refractive index of GaN:O having the electron concentration between 1·1018 - 8·1019 cm-3. Though the measured absorption coefficient for the highest doped GaN are rather high (200 cm-1) we show, using an optical mode simulation, that you can design a InGaN laser diode operating in blue/green region with decent properties and low optical losses. We propose to use relatively thin AlGaN interlayer to separate plasmonic GaN from the waveguide and thus to dramatically reduce the optical losses.

Paper Details

Date Published: 28 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826216 (28 February 2012); doi: 10.1117/12.906866
Show Author Affiliations
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Tomasz Czyszanowski, Technical Univ. of Lodz (Poland)
Lucja Marona, Institute of High Pressure Physics (Poland)
Szymon Grzanka, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Anna Kafar, Gdańsk Univ. of Technology (Poland)
Institute of High Pressure Physics (Poland)
Szymon Stanczyk, Gdańsk Univ. of Technology (Poland)
Institute of High Pressure Physics (Poland)
Tadek Suski, Institute of High Pressure Physics (Poland)
Mike Leszczyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Michal Boćkowski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Grzegorz Muzioł, Institute of High Pressure Physics (Poland)
Maciej Kuc, Technical Univ. of Lodz (Poland)
Robert Sarzała, Technical Univ. of Lodz (Poland)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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