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Proceedings Paper

Wide-area SWIR arrays and active illuminators
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Paper Abstract

We describe the factors that go into the component choices for a short wavelength (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7°C. We have mated our InGaAs detector arrays to 640x512 readout integrated integrated circuits (ROICs) to make focal plane arrays (FPAs). In addition, we have fabricated high definition 1920x1080 FPAs for wide field of view imaging. The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 microns at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0°C. FLIR has also developed a high definition, 1920x1080, 15 um pitch SWIR sensor. In addition, FLIR has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, provide artifact-free imagery versus conventional laser illuminators.

Paper Details

Date Published: 21 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82682Y (21 January 2012); doi: 10.1117/12.906834
Show Author Affiliations
Michael MacDougal, FLIR Electro-Optical Components (United States)
Andrew Hood, FLIR Electro-Optical Components (United States)
Jon Geske, FLIR Electro-Optical Components (United States)
Chad Wang, FLIR Electro-Optical Components (United States)
Daniel Renner, FLIR Electro-Optical Components (United States)
David Follman, FLIR Electro-Optical Components (United States)
Paula Heu, FLIR Electro-Optical Components (United States)


Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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