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Proceedings Paper

GaN substrates with variable vicinal angles for laser diode applications
Author(s): Marcin Sarzyński; Tadeusz Suski; Grzegorz Staszczak; Piotr Perlin; Michał Leszczyński; Anna Reszka; Bogdan Kowalski
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Paper Abstract

GaN c-plane substrates were patterned to obtain 30-70 μm wide differently angled regions. The patterning technique was based on multilevel pattern photolithography and ion etching and was similar to the one used for the diffraction optics elements fabrication. The region angles were between 0.2 and 3.4 degrees with respect to the c-plane. It is shown that photoluminescence and cathodoluminescence wavelengths of InGaN/GaN quantum wells grown by metalorganic vapor phase epitaxy depend on each region's angle. Laser diodes grown on freestanding patterned GaN are also demonstrated. The lasing wavelength of chips grown in differently angled substrate regions are different. We attribute those differences to indium content differences in each of the angled regions.

Paper Details

Date Published: 27 February 2012
PDF: 9 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826208 (27 February 2012); doi: 10.1117/12.906766
Show Author Affiliations
Marcin Sarzyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Tadeusz Suski, Institute of High Pressure Physics (Poland)
Grzegorz Staszczak, Institute of High Pressure Physics (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Michał Leszczyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Anna Reszka, Institute of Physics (Poland)
Bogdan Kowalski, Institute of Physics (Poland)

Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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