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Proceedings Paper

(Al,In)GaN laser diodes with optimized ridge structures
Author(s): Katarzyna Holc; Klaus Köhler; Wilfried Pletschen; Joachim Wagner; Ulrich T. Schwarz
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Paper Abstract

We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 nm to 425 nm. Using different commercially available free standing GaN substrates, we adjust the epitaxial design and optimize the processing sequence for the different kinds of substrates. In particular we focus on the ridge formation. We compare different fabrication methods to obtain devices with ridge widths around ≤2 μm. So far, we have achieved threshold currents around 60 mA and slope efficiencies exceeding 1 W/A.

Paper Details

Date Published: 8 February 2012
PDF: 7 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770H (8 February 2012); doi: 10.1117/12.906741
Show Author Affiliations
Katarzyna Holc, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Klaus Köhler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Wilfried Pletschen, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Joachim Wagner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Ulrich T. Schwarz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Freiburg Univ. (Germany)


Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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