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Proceedings Paper

Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates
Author(s): Huei-Min Huang; Tien-Chang Lu; Chiao-Yun Chang; Yu-Pin Lan; Shih-Chun Ling; Wei-Wen Chan; Hao-Chung Kuo; Shing-Chung Wang
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Paper Abstract

Non-polar (a-plane) InGaN/GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73×10-2 to 2.58×10-2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.

Paper Details

Date Published: 28 February 2012
PDF: 6 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621Y (28 February 2012); doi: 10.1117/12.906635
Show Author Affiliations
Huei-Min Huang, National Chiao Tung Univ. (Taiwan)
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)
Chiao-Yun Chang, National Chiao Tung Univ. (Taiwan)
Yu-Pin Lan, National Chiao Tung Univ. (Taiwan)
Shih-Chun Ling, National Chiao Tung Univ. (Taiwan)
Wei-Wen Chan, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Shing-Chung Wang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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