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Proceedings Paper

Lateral cavity photonic crystal surface emitting lasers with ultralow threshold and large power
Author(s): Yufei Wang; Hongwei Qu; Wenjun Zhou; Bin Jiang; Jianxin Zhang; Aiyi Qi; Lei Liu; Feiya Fu; Wanhua Zheng
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Paper Abstract

The Bragg diffraction condition of surface-emitting lasing action is analyzed and Γ2-1 mode is chosen for lasing. Two types of lateral cavity photonic crystal surface emitting lasers (LC-PCSELs) based on the PhC band edge mode lateral resonance and vertical emission to achieve electrically driven surface emitting laser without distributed Bragg reflectors in the long wavelength optical communication band are designed and fabricated. Deep etching techniques, which rely on the active layer being or not etched through, are adopted to realize the LC-PCSELs on the commercial AlGaInAs/InP multi-quantum-well (MQW) epitaxial wafer. 1553.8 nm with ultralow threshold of 667 A/cm2 and 1575 nm with large power of 1.8 mW surface emitting lasing actions are observed at room temperature, providing potential values for mass production with low cost of electrically driven PCSELs.

Paper Details

Date Published: 8 February 2012
PDF: 8 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827706 (8 February 2012); doi: 10.1117/12.906609
Show Author Affiliations
Yufei Wang, Institute of Semiconductors (China)
Hongwei Qu, Institute of Semiconductors (China)
Wenjun Zhou, Institute of Semiconductors (China)
Bin Jiang, Institute of Semiconductors (China)
Jianxin Zhang, Institute of Semiconductors (China)
Aiyi Qi, Institute of Semiconductors (China)
Lei Liu, Institute of Semiconductors (China)
Feiya Fu, Institute of Semiconductors (China)
Wanhua Zheng, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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