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Proceedings Paper

Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS
Author(s): M. Meneghini; C. de Santi; N. Trivellin; K. Orita; S. Takigawa; T. Tanaka; D. Ueda; G. Meneghesso; E. Zanoni
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Paper Abstract

Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. The aim of this paper is to show - by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.

Paper Details

Date Published: 27 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826215 (27 February 2012); doi: 10.1117/12.906551
Show Author Affiliations
M. Meneghini, Univ. degli Studi di Padova (Italy)
C. de Santi, Univ. degli Studi di Padova (Italy)
N. Trivellin, Univ. degli Studi di Padova (Italy)
K. Orita, Panasonic Corp. (Japan)
S. Takigawa, Panasonic Corp. (Japan)
T. Tanaka, Panasonic Corp. (Japan)
D. Ueda, Panasonic Corp. (Japan)
G. Meneghesso, Univ. degli Studi di Padova (Italy)
E. Zanoni, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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