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Proceedings Paper

Improvement of wall plug efficiency in near-infrared lateral single-mode LDs at high temperature
Author(s): Tetsuya Yagi; Takuto Maruyama; Masatsugu Kusunoki; Naoyuki Shimada; Motoharu Miyashita
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Paper Abstract

Wall plug efficiency (WPE) of 830 nm single mode LD is dramatically improved with AlGaInP material. Conventional near infrared LDs based on AlGaAs have poor temperature characteristics due to small energy gap in conduction band between a p-cladding layer and an active layer. An AlGaInP based LD is a most effective candidate for the excellent characteristics because of the large gap. A high power 830 nm LD is newly designed based on AlGaInP. The LD shows excellent temperature characteristics as To of 154 K, and its WPE is around 40% at 400mW, CW output, 60°C case temperature. They also show very stable operation at the condition up to 1,100 hours.

Paper Details

Date Published: 8 February 2012
PDF: 7 pages
Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 82410Y (8 February 2012); doi: 10.1117/12.906503
Show Author Affiliations
Tetsuya Yagi, Mitsubishi Electric Corp. (Japan)
Takuto Maruyama, Mitsubishi Electric Corp. (Japan)
Masatsugu Kusunoki, Mitsubishi Electric Corp. (Japan)
Naoyuki Shimada, Mitsubishi Electric Corp. (Japan)
Motoharu Miyashita, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 8241:
High-Power Diode Laser Technology and Applications X
Mark S. Zediker, Editor(s)

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