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Proceedings Paper

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells
Author(s): Yongkun Sin; Stephen D. LaLumondiere; Brendan J. Foran; William T. Lotshaw; Steven C. Moss; Tae Wan Kim; Peter Dudley; Jeremy Kirch; Steven Ruder; Luke J. Mawst; Thomas F. Kuech
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Paper Abstract

Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (Eg = ~ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in InxGa1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

Paper Details

Date Published: 28 February 2012
PDF: 12 pages
Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 825516 (28 February 2012); doi: 10.1117/12.906424
Show Author Affiliations
Yongkun Sin, The Aerospace Corp. (United States)
Stephen D. LaLumondiere, The Aerospace Corp. (United States)
Brendan J. Foran, The Aerospace Corp. (United States)
William T. Lotshaw, The Aerospace Corp. (United States)
Steven C. Moss, The Aerospace Corp. (United States)
Tae Wan Kim, Univ. of Wisconsin-Madison (United States)
Peter Dudley, Univ. of Wisconsin-Madison (United States)
Jeremy Kirch, Univ. of Wisconsin-Madison (United States)
Steven Ruder, Univ. of Wisconsin-Madison (United States)
Luke J. Mawst, Univ. of Wisconsin-Madison (United States)
Thomas F. Kuech, Univ. of Wisconsin-Madison (United States)


Published in SPIE Proceedings Vol. 8255:
Physics and Simulation of Optoelectronic Devices XX
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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