Share Email Print
cover

Proceedings Paper

Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers
Author(s): T. Leinonen; V.-M. Korpijärvi; A. Härkönen; M. Guina
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We review recent results concerning the development of dilute nitride based semiconductor disk lasers. We have demonstrated over 7.4 W of output power at the second harmonic wavelength (around 590 nm) using a β-BBO crystal. Over 10 W has been demonstrated at ~1.2 μm, and multi-watt output power has been achieved at 589 nm with narrow linewidth (δν < 20 MHz).

Paper Details

Date Published: 14 February 2012
PDF: 7 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824208 (14 February 2012); doi: 10.1117/12.906204
Show Author Affiliations
T. Leinonen, Tampere Univ. of Technology (Finland)
V.-M. Korpijärvi, Tampere Univ. of Technology (Finland)
A. Härkönen, Tampere Univ. of Technology (Finland)
M. Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)

© SPIE. Terms of Use
Back to Top