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Proceedings Paper

III-V nanowire solar cells
Author(s): R. R. LaPierre
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Paper Abstract

The continuity and Poisson equations are solved numerically to obtain J-V characteristics and photoconversion efficiency of a two-junction solar cell. The cell consists of a top junction comprised of nanowires with bandgap of 1.7 eV grown on a bottom junction comprised of a Si substrate. The lattice relaxation possible in nanowires permits latticemismatched III-V material growth on Si, thereby achieving the optimum bandgaps in a two-junction cell. The model indicates a limiting efficiency of 42.3% under a concentration of 500 Suns (AM1.5D spectrum). This limiting efficiency is similar to that calculated for the planar lattice-matched triple-junction Ge/InGaAs/InGaP cell. Methods of fabricating the nanowire/Si cell are discussed including requirements for nanowire sidewall surface passivation.

Paper Details

Date Published: 14 December 2011
PDF: 3 pages
Proc. SPIE 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 831203 (14 December 2011); doi: 10.1117/12.906022
Show Author Affiliations
R. R. LaPierre, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 8312:
Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III
Min Gu, Editor(s)

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