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Proceedings Paper

Optimization of InAs/GaSb superlattice pin photodiode design for the high temperature operation in the midwave infrared range
Author(s): P. Christol; R. Taalat; C. Maingue-Wilson; C. Cervera; H. Aït-Kaci; J. B. Rodriguez; I. Ribet-Mohamed
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Paper Abstract

InAs/GaSb superlattice pin photodiodes showing asymmetrical period design were fabricated by MBE on ptype GaSb substrate. These SL structures exhibited cut-off wavelength in the midwave infrared domain (MWIR) at 5μm at 80K. Electrical characterizations including dark current and capacitance-voltage measurements were performed on single detectors in the temperature range [77K-300K]. The SL photodiode measurements revealed carrier concentrations of about 6x1014 cm-3 at 77K, dark current densities J= 4x10-8 A/cm2 at 77K, J = 0.19A/cm2 at 200K and J = 10A/cm2 at 300K for Vbias =-50mV. The measured R0A product is higher than 1.5x106Ω.cm2 at 77K and equal to 1x10-2Ω.cm2 at T=300K, for cut-off device equal to 5μm and 6.05μm, respectively. These results are compared with the ones obtained by symmetrical SL structure and show that the differential resistance area product is improved by more than one order of magnitude. These results obtained help us to define the optimized SL pin structure design suitable for high temperature operation in the MWIR domain.

Paper Details

Date Published: 21 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680T (21 January 2012); doi: 10.1117/12.905976
Show Author Affiliations
P. Christol, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
R. Taalat, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
C. Maingue-Wilson, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
C. Cervera, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
H. Aït-Kaci, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
J. B. Rodriguez, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
I. Ribet-Mohamed, ONERA (France)


Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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