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Proceedings Paper

Near-field evolution in strongly pumped broad area diode lasers
Author(s): Martin Hempel; Jens W. Tomm; Martina Bäumler; Helmer Konstanzer; Jayanta Mukherjee; Thomas Elsässer
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Paper Abstract

Many applications such as pumping of solid state lasers or ignition of explosives require high optical output powers during a short period. Pulsed operated diode lasers meet these requirements. They can be driven at elevated power levels, well above the ones specified for continuous wave (cw) operation. The optical near-field intensity of a diode laser in this operation regime is a key parameter since it determines the beam properties of the device. High power AlGaAs/GaAs quantum well broad area diode lasers are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser near-fields are monitored on a picosecond time scale using a streak-camera setup during pulse currents of up to ~50 times the threshold current. A transition from gain guiding to thermally-induced index guiding of the near-field is shown. A further power increase is prevented by catastrophic optical damage (COD). This sudden failure mechanism is studied in conjunction with filamentary properties of the near-field. The defect growth dynamics resolved on the picosecond time scale is used to gather inside into the physics behind COD.

Paper Details

Date Published: 8 February 2012
PDF: 8 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771H (8 February 2012); doi: 10.1117/12.905945
Show Author Affiliations
Martin Hempel, Max-Born-Institut (Germany)
Jens W. Tomm, Max-Born-Institut (Germany)
Martina Bäumler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Helmer Konstanzer, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Jayanta Mukherjee, Univ. of Surrey (United Kingdom)
Thomas Elsässer, Max-Born-Institut (Germany)

Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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