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Proceedings Paper

Long-wavelength quantum dot FP and DFB lasers for high temperature applications
Author(s): T. Kageyama; K. Takada; K. Nishi; M. Yamaguchi; R. Mochida; Y. Maeda; H. Kondo; K. Takemasa; Y. Tanaka; T. Yamamoto; M. Sugawara; Y. Arakawa
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Paper Abstract

High temperature (>125°C) resistant long-wavelength semiconductor lasers are attractive as light sources in a variety of harsh environments. Here, we report extremely high temperature continuous-wave (CW) operation of QD lasers on GaAs substrate emitted at 1300-nm-range by enhancing gain and increasing the quantized-energy separation of the QD active layers. A suppression of the In out-diffusion during MBE from self-assembled InAs QDs significantly reduced inhomogeneous broadening with high QD sheet density maintained. QD-FP laser exhibited record high CW-lasing temperature for long-wavelength laser of 220°C and QD-DFB laser also exhibited high CW-lasing temperature of 150°C by employing high gain QD active media.

Paper Details

Date Published: 9 February 2012
PDF: 8 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770C (9 February 2012); doi: 10.1117/12.905873
Show Author Affiliations
T. Kageyama, QD Laser, Inc. (Japan)
K. Takada, The Univ. of Tokyo (Japan)
K. Nishi, QD Laser, Inc. (Japan)
The Univ. of Tokyo (Japan)
M. Yamaguchi, QD Laser, Inc. (Japan)
R. Mochida, QD Laser, Inc. (Japan)
The Univ. of Tokyo (Japan)
Y. Maeda, QD Laser, Inc. (Japan)
H. Kondo, QD Laser, Inc. (Japan)
K. Takemasa, QD Laser, Inc. (Japan)
Y. Tanaka, QD Laser, Inc. (Japan)
Fujitsu Labs., Ltd. (Japan)
T. Yamamoto, QD Laser, Inc. (Japan)
Fujitsu Labs., Ltd. (Japan)
The Univ. of Tokyo (Japan)
M. Sugawara, QD Laser, Inc. (Japan)
The Univ. of Tokyo (Japan)
Y. Arakawa, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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