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Proceedings Paper

Pulsed laser deposition of Si nanodots for photonic applications
Author(s): Manisha Gupta; Fatema Rezwana Chowdhury; Vincent Sauer; Seong Shan Yap; Turid Worren Reenaas; Ying Yin Tsui
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Paper Abstract

Several growths of Si nanodots on Si and GaAs substrates were conducted by pulsed laser deposition (PLD) using a KrF laser of 248nm, 15ns, 12Hz and a Ti-sapphire laser of 800nm, 130fs, 1kHz at 1x10-5mbar vacuum. The laser fluencies on a Si target were varied from 3 to 32J/cm2 for the nanosecond (ns) PLD growths and 1-2.75J/cm2 for the femtosecond (fs) PLD. Wide range of nanodots from 20nm to a few micron size droplets were observed from both the ns and fs PLD. Auger electron spectroscopy of the nanodots was conducted and which indicated that the nanodots were without contamination. A technique using a mask consisting of an array of small holes was used to obtain high density nanodots with uniform size. The array of 100nm diameter holes was created by E-beam lithography. With this technique we have achieved 100nm Si dots with 300nm spacing between them, with few defects. We have observed that laser fluences closer to the ablation threshold work better for deposition using the EBL mask. In summary, we have demonstrated the growth of 100nm Si nanodots in an array with very few defects using the EBL masking technique.

Paper Details

Date Published: 31 August 2011
PDF: 6 pages
Proc. SPIE 8007, Photonics North 2011, 80070J (31 August 2011); doi: 10.1117/12.905690
Show Author Affiliations
Manisha Gupta, Univ. of Alberta (Canada)
Fatema Rezwana Chowdhury, Univ. of Alberta (Canada)
Vincent Sauer, Univ. of Alberta (Canada)
Seong Shan Yap, Norwegian Univ. of Science and Technology (Norway)
Turid Worren Reenaas, Norwegian Univ. of Science and Technology (Norway)
Ying Yin Tsui, Univ. of Alberta (Canada)


Published in SPIE Proceedings Vol. 8007:
Photonics North 2011
Raman Kashyap; Michel Têtu; Rafael N. Kleiman, Editor(s)

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