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Proceedings Paper

Accurate characterization of doped semiconductors with terahertz spectroscopy
Author(s): Osman S. Ahmed; Mohamed A. Swillam; Mohamed H. Bakr; Xun Li
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Paper Abstract

The Characterization of the material optical properties with terahertz time domain spectroscopy is usually formulated as an optimization problem with an objective function representing the deviation of the theoretical scattering parameters from the measured ones. Both the magnitude and phase of the scattering parameters are utilized. For samples of unknown thickness, false estimation of the thickness limits the accuracy of the results. We propose an accurate optimization technique that predicts the actual thickness by solving only one optimization problem. Our technique is also efficient compared to other techniques that solve N expensive optimization problems. Dispersive dielectric models are embedded for accurate parameter extraction of a sample with unknown thickness. For doped semiconductors we utilize the surface Plasmon Polariton behavior for accurately estimating the doping level of semiconductor sample of unknown characteristics. By estimating the frequency at which the negative permittivity exists, we can accurately estimate the doping level of the semiconductor. Our technique has been demonstrated to be efficient and accurate through a number of examples.

Paper Details

Date Published: 8 September 2011
PDF: 8 pages
Proc. SPIE 8007, Photonics North 2011, 80071K (8 September 2011); doi: 10.1117/12.905581
Show Author Affiliations
Osman S. Ahmed, McMaster Univ. (Canada)
Mohamed A. Swillam, Univ. of Toronto (Canada)
Mohamed H. Bakr, McMaster Univ. (Canada)
Xun Li, McMaster Univ. (Canada)

Published in SPIE Proceedings Vol. 8007:
Photonics North 2011
Raman Kashyap; Michel Têtu; Rafael N. Kleiman, Editor(s)

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