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Proceedings Paper

High efficiency InGaN solar cell with a graded p-InGaN top layer
Author(s): Nobuhiko Sawaki; Tomoki Fujisawa
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Paper Abstract

A new device structure was investigated numerically to improve the conversion efficiency of a single junction p- InGaN/n-InGaN solar cell, where the energy band gap of the p-type top layer was increased gradually by varying the In composition during the growth. The gradual increase of the band gap generates a built in electric filed in the p-type top layer which accelerates drift motion of photo-excited electrons. Numerical results showed that more than one order of magnitude enhancement of the photo-current is achieved by the built in electric field as high as 100V/cm.

Paper Details

Date Published: 28 February 2012
PDF: 7 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826210 (28 February 2012); doi: 10.1117/12.905531
Show Author Affiliations
Nobuhiko Sawaki, Aichi Institute of Technology (Japan)
Tomoki Fujisawa, Aichi Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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