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Proceedings Paper

A local vibration mode in a carbon doped (1-101)AlGaN
Author(s): N. Sawaki; K. Hagiwara; K. Yamashita; N. Koide; Y. Honda; M. Yamaguchi; H. Amano
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Paper Abstract

Behavior of carbon (C) doping in a (1-101)AlGaN has been investigated by grazing incidence FTIR analyses at room temperature. The sample was grown by MOVPE on (1-101)facets of GaN triangular stripes made on (111)Si substrate. Intentional C doping was performed by introducing C2H2 into the reactor during the growth. In the FTIR spectra, a C related LVM mode was found out at 950 cm-1 which was associated with A1(LO) mode of AlN at 890cm-1. The behavior was similar to the results found in an un-intentionally Al doped GaN sample. Linear chain model with an effective mass gives the LVM energy of Al-C bond at 930 cm-1, a little lower than the experimental observation. The C doping on the N site might be performed forming a complex with additional elements.

Paper Details

Date Published: 27 February 2012
PDF: 7 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620D (27 February 2012); doi: 10.1117/12.905529
Show Author Affiliations
N. Sawaki, Aichi Institute of Technology (Japan)
K. Hagiwara, Aichi Institute of Technology (Japan)
K. Yamashita, Nagoya Univ. (Japan)
N. Koide, Nagoya Univ. (Japan)
Y. Honda, Nagoya Univ. (Japan)
M. Yamaguchi, Nagoya Univ. (Japan)
H. Amano, Nagoya Univ. (Japan)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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