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Proceedings Paper

Enhanced infrared normal spectral emissivity of microstructured silicon at 200 to 400 °C
Author(s): Guojin Feng; Yuan Li; Yu Wang; Ping Li; Tingting Guo
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Paper Abstract

The infrared normal spectral emissivity of microstructured silicon prepared by femtosecond laser was measured for the middle infrared waveband at temperature range 200 to 400°C. Compared to that of flat silicon, emissivity was enhanced over the entire wavelength range. For a sample with different spike height, the max emissivity at a temperature of 300°C emissivity nearly reaches to 0.99 . Although the average emissivity is not very higher, it can be used stably at more wide temperature ranges. These results show the potential for microstructured silicon to be used as a flat blackbody source or silicon-based devices.

Paper Details

Date Published: 28 November 2011
PDF: 5 pages
Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020M (28 November 2011); doi: 10.1117/12.905519
Show Author Affiliations
Guojin Feng, National Institute of Metrology (China)
Yuan Li, Fudan Univ. (China)
Yu Wang, National Institute of Metrology (China)
Ping Li, National Institute of Metrology (China)
Tingting Guo, China Agricultural Univ. (China)


Published in SPIE Proceedings Vol. 8202:
2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology
Hoi Sing Kwok; Fengzhou Fang; Lian Xiang Yang; Chongxiu Yu; Albert A. Weckenmann; Yanbing Hou; Jinxue Wang; Ji Zhao; Jinxue Wang; Peter Zeppenfeld; Boyu Ding; Boyu Ding; Liquan Dong; Liquan Dong; Jack K. Luo; Boyu Ding; Liquan Dong; Jinxue Wang, Editor(s)

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