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Proceedings Paper

Design of low-noise output amplifiers for P-channel charge-coupled devices fabricated on high-resistivity silicon
Author(s): S. Haque; F. Dion; R. Frost; R. Groulx; S. E. Holland; A. Karcher; W. F. Kolbe; N. A. Roe; G. Wang; Y. Yu
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Paper Abstract

We describe the design and optimization of low-noise, single-stage output amplifiers for p-channel charge-coupled devices (CCDs) used for scientific applications in astronomy and other fields. The CCDs are fabricated on highresistivity, 4000-5000 Ω-cm, n-type silicon substrates. Single-stage amplifiers with different output structure designs and technologies have been characterized. The standard output amplifier is designed with an n+ polysilicon gate that has a metal connection to the sense node. In an effort to lower the output amplifier readout noise by minimizing the capacitance seen at the sense node, buried-contact technology has been investigated. In this case, the output transistor has a p+ polysilicon gate that connects directly to the p+ sense node. Output structures with buried-contact areas as small as 2 μm × 2 μm are characterized. In addition, the geometry of the source-follower transistor was varied, and we report test results on the conversion gain and noise of the various amplifier structures. By use of buried-contact technology, better amplifier geometry, optimization of the amplifier biases and improvements in the test electronics design, we obtain a 45% reduction in noise, corresponding to 1.7 e- rms at 70 kpixels/sec.

Paper Details

Date Published: 15 February 2012
PDF: 12 pages
Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980X (15 February 2012); doi: 10.1117/12.905460
Show Author Affiliations
S. Haque, Lawrence Berkeley National Lab. (United States)
F. Dion, Teledyne DALSA Semiconductor (Canada)
R. Frost, Teledyne DALSA Semiconductor (Canada)
R. Groulx, Teledyne DALSA Semiconductor (Canada)
S. E. Holland, Lawrence Berkeley National Lab. (United States)
A. Karcher, Lawrence Berkeley National Lab. (United States)
W. F. Kolbe, Lawrence Berkeley National Lab. (United States)
N. A. Roe, Lawrence Berkeley National Lab. (United States)
G. Wang, Lawrence Berkeley National Lab. (United States)
Y. Yu, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 8298:
Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII
Ralf Widenhorn; Valérie Nguyen; Antoine Dupret, Editor(s)

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