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Proceedings Paper

Research on the h-BN films for high frequency SAW devices
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Paper Abstract

Hexagonal Boron Nitride (h-BN) films For high-frequency SAW devices were deposited on Ti/Al/Si(111) wafers by RF magnetron sputtering. The structure of h-BN films was investigated by fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra. And the surface morphology and piezoelectric properties of h-BN film was characterized by atomic force microscopy (AFM). And the characterization results show that when the RF power is 300w and other experimental parameters were fixed, h-BN films was in high purity and the c-axis oriented, h-BN films was in high purity and the c-axis oriented, and the particles of which are uniform and compact, roughness is 2.63nm with piezoelectric and piezoelectric response even, meet the requirements of high sound propagation speed and excellent piezoelectric for high frequency SAW devices. The studies of piezoelectric test of thin films have shown that PFM test method of atomic force microscopy was suitable for characterization of piezoelectric and properties of the piezoelectric response distribution of nano-structure semiconductor thin film.

Paper Details

Date Published: 28 November 2011
PDF: 7 pages
Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020L (28 November 2011); doi: 10.1117/12.905402
Show Author Affiliations
Lian-jie Sun, Tianjin Univ. of Technology (China)
Xi-ming Chen, Tianjin Univ. of Technology (China)


Published in SPIE Proceedings Vol. 8202:
2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology
Hoi Sing Kwok; Fengzhou Fang; Lian Xiang Yang; Chongxiu Yu; Albert A. Weckenmann; Yanbing Hou; Jinxue Wang; Ji Zhao; Jinxue Wang; Peter Zeppenfeld; Boyu Ding; Boyu Ding; Liquan Dong; Liquan Dong; Jack K. Luo; Boyu Ding; Liquan Dong; Jinxue Wang, Editor(s)

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