Share Email Print

Proceedings Paper

Carbon-doped p-type (0001) plane AlGaN (Al=0.06 to 0.55) with high hole density
Author(s): Hideo Kawanishi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, promising experimental results for the p-type electrical properties of carbon-doped (C-doped) AlGaN are discussed. P-type conductivity was experimentally achieved in C-doped (0001) plane AlGaN layers with from a small amount to 55% solid Al composition, but not in (0001) plane GaN. The maximum free hole density (determined by van der Pauw geometry-Hall effect measurement) achieved for an AlGaN layer with 10% solid Al composition was p= 3.2 x 1018 cm-3. The maximum net ionized acceptor densities (NIAD = (NA --ND +)), which were determined by capacitance-voltage measurement, for AlGaN with 6, 10, 27, and 55% solid Al compositions, were all in the range of (3-7) x 1018 cm-3. Moreover, the electrical activity of the carbon acceptors was estimated to be 55-71% from the NIAD and secondary-ion microprobe mass spectrometry analysis data on the carbon concentration. Activation energy of carbon acceptors was estimated to be 22-30 meV from this electrical activity. On the other hand, optical property of C-doped AlGaN was compared with undoped AlGaN. Then we found new emission, which related to carbon acceptors, at smaller energy side by 29-35 meV from band edge-emission of the AlGaN. A p-n junction was also fabricated using the C-doped p-type AlGaN.

Paper Details

Date Published: 27 February 2012
PDF: 9 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620B (27 February 2012); doi: 10.1117/12.905301
Show Author Affiliations
Hideo Kawanishi, Kogakuin Univ. (Japan)

Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top