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Proceedings Paper

Optical mode pattern study of GaN LEDs with and without top nano-gratings
Author(s): Greg Chavoor; Doug Cattarusa; Xiaomin Jin; Xing-Xing Fu; Xiang-Ning Kang; Bei Zhang; Guo-Yi Zhang
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Paper Abstract

This study analyzes optical confinement factor and light emitting mode order for three different GaN LEDs: a conventional LED, thin Film LED, and thin Film LED with a photonic crystal (PhC) grating. For the first structure, we increase the thickness of AlxGa1-xN from 0 to 600nm, alter the x composition in AlxGa1-xN from 0.05 to 0.2 in steps of 0.05, and adjust the p-GaN and n-GaN thicknesses each from 0 to 200nm. For the second structure, we alter the n-GaN substrate thickness from 300-1000nm in steps of 100nm and 1000- 4000nm in steps of 1000nm. These simulations show that increasing the substrate thickness causes the light emitting mode order to increase. The higher the mode, the more current is needed to make the device emit light. Higher current leads to shorter device lifetime. The last structure contains a photonic crystal grating with a period T = 100nm, 230nm, 460nm, 690nm, 920nm, 1500nm, 2000nm, 3000nm and 50% duty cycle. For each grating period, we display the effects on optical confinement factor and optical field intensity. The results show that changing the grating period does not affect the mode order, but does affect the optical field intensity. A larger grating period corresponds to lower optical field intensity. Maximizing optical field intensity increases the brightness of the device. The simulation method above can be used to improve the efficiency, brightness, and lifetime of GaN LEDs by reducing the effects of transverse mode coupling and maximizing the optical field intensity.

Paper Details

Date Published: 6 February 2012
PDF: 9 pages
Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82780Q (6 February 2012); doi: 10.1117/12.905258
Show Author Affiliations
Greg Chavoor, California Polytechnic State Univ., San Luis Obispo (United States)
Doug Cattarusa, California Polytechnic State Univ., San Luis Obispo (United States)
Xiaomin Jin, California Polytechnic State Univ., San Luis Obispo (United States)
Xing-Xing Fu, Peking Univ. (China)
Xiang-Ning Kang, Peking Univ. (China)
Bei Zhang, Peking Univ. (China)
Guo-Yi Zhang, Peking Univ. (China)


Published in SPIE Proceedings Vol. 8278:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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