Share Email Print
cover

Proceedings Paper

100,000 h estimated lifetime of 100-μm-stripe width 650 nm broad area lasers at an output power of 1.2 W
Author(s): B. Sumpf; J. Fricke; P. Ressel; M. Zorn; G. Erbert; G. Tränkle
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Compared to longer wavelength devices, the development of reliable red-emitting diode lasers is more challenging due to the applicable semiconductors and the limited stability of the laser facets. Reliable operation over 1,000 h is sufficient for the pumping of fs-Cr:LiSAF lasers or in photodynamic therapy, but laser display technology requires material with the potential to operate failure free over more than 10,000 h. Reliability tests for 650 nm broad area (BA) lasers based on a GaInP single quantum well embedded in AlGaInP waveguide layers will be presented. 100 μm stripe width BA lasers with a length of 1.5 mm were fabricated as low mesa structures. The facets were optically coated including a facet passivation procedure. Mounted on diamond heat spreader and standard C-mounts at 15°C the devices had threshold currents of 550 mA, slope efficiencies of 1.2 W/A, and conversion efficiencies up to 0.33. Aging tests of four BA lasers were performed at output powers of 1.1 W and 1.2 W over a total test time of 20,000 h at a heat sink temperature of 15°C. No failure occurred during the lifetime test. The degradation rates for all devices were smaller than 3x10-6 h-1. A lifetime of 100,000 h at an operational power of 1.2 W can be estimated. These data proof that the material is well suited for the fabrication of high-brightness diode lasers for laser display technology.

Paper Details

Date Published: 8 February 2012
PDF: 8 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771I (8 February 2012); doi: 10.1117/12.905069
Show Author Affiliations
B. Sumpf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
J. Fricke, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
P. Ressel, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
M. Zorn, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top