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Proceedings Paper

Modeling of the electrical carrier transport in III-V on silicon tandem solar cell structures
Author(s): T. K. Maiti; Dan Cheong; Jingfeng Yang; R. N Kleiman
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Paper Abstract

The electrical carrier transport of a tandem cell structure was evaluated by investigating the band alignment of and carrier transport through a tunnel junction. The modeling structure of a tandem cell consists of a III-V (or II-VI) top cell layer, a Si bottom cell layer and tunnel junction layers in-between which connect the top and the bottom cells. The values of energy bandgap and electron affinity of each layer were varied to investigate their effect on the energy barrier height at the interface between Si and compound semiconductors of interest. The contour plots of barrier heights for majority and minority carriers at the hetero-interface are used as a starting point to define the successful regions for electrical carrier transport through the tunnel junctions.

Paper Details

Date Published: 8 September 2011
PDF: 6 pages
Proc. SPIE 8007, Photonics North 2011, 80071W (8 September 2011); doi: 10.1117/12.905027
Show Author Affiliations
T. K. Maiti, McMaster Univ. (Canada)
Dan Cheong, ARISE Technologies Corp. (Canada)
Jingfeng Yang, McMaster Univ. (Canada)
R. N Kleiman, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 8007:
Photonics North 2011
Raman Kashyap; Michel Têtu; Rafael N. Kleiman, Editor(s)

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