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Proceedings Paper

Manufacturing of 100mm diameter GaSb substrates for advanced space based applications
Author(s): L. P. Allen; J. P. Flint; G. Meshew; J. Trevethan; G. Dallas; A. Khoshakhlagh; C. J. Hill
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Paper Abstract

Engineered substrates such as large diameter (100mm) GaSb wafers need to be ready years in advance of any major shift in DoD and commercial technology, and typically before much of the rest of the materials and equipment for fabricating next generation devices. Antimony based III-V semiconductors are of significant interest for advanced applications in optoelectronics, high speed transistors, microwave devices, and photovoltaics. GaSb demand is increasing due to its lattice parameter matching of various ternary and quaternary III-V compounds, as their bandgaps can be engineered to cover a wide spectral range. For these stealth and spaced based applications, larger format IRFPAs benefit clearly from next generation starting substrates. In this study, we have manufactured and tested 100mm GaSb substrates. This paper describes the characterization process that provides the best possible GaSb material for advanced IRFPA and SLS epi growth. The analysis of substrate by AFM surface roughness, particles, haze, GaSb oxide character and desorption using XPS, flatness measurements, and SLS based epitaxy quality are shown. By implementing subtle changes in our substrate processing, we show that a Sb-oxide rich surface is routinely provided for rapid desorption. Post-MBE CBIRD structures on the 100mm ULD GaSb were examined and reveals a high intensity, 6.6nm periodicity, low (15.48 arcsec) FWHM peak distribution that suggests low surface strain and excellent lattice matching. The Ra for GaSb is a consistent ~0.2-4nm, with average batch wafer warp of ~4 μm to provide a clean, flat GaSb template critical for next generation epi growth.

Paper Details

Date Published: 21 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826817 (21 January 2012); doi: 10.1117/12.904777
Show Author Affiliations
L. P. Allen, Galaxy Compound Semiconductors, Inc. (United States)
J. P. Flint, Galaxy Compound Semiconductors, Inc. (United States)
G. Meshew, Galaxy Compound Semiconductors, Inc. (United States)
J. Trevethan, Galaxy Compound Semiconductors, Inc. (United States)
G. Dallas, Galaxy Compound Semiconductors, Inc. (United States)
A. Khoshakhlagh, California Institute of Technology (United States)
C. J. Hill, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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