Share Email Print
cover

Proceedings Paper

Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin film on Si substrate
Author(s): C. Pawong; R. Chitaree; C. Soankwan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO2 thinfilm on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters ψ and Δ. SiO2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system.

Paper Details

Date Published: 28 November 2011
PDF: 8 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081I (28 November 2011); doi: 10.1117/12.904420
Show Author Affiliations
C. Pawong, Mahidol Univ. (Thailand)
R. Chitaree, Mahidol Univ. (Thailand)
C. Soankwan, Mahidol Univ. (Thailand)


Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)

© SPIE. Terms of Use
Back to Top