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Proceedings Paper

Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin film on Si substrate
Author(s): C. Pawong; R. Chitaree; C. Soankwan
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Paper Abstract

This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO2 thinfilm on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters ψ and Δ. SiO2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system.

Paper Details

Date Published: 28 November 2011
PDF: 8 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081I (28 November 2011); doi: 10.1117/12.904420
Show Author Affiliations
C. Pawong, Mahidol Univ. (Thailand)
R. Chitaree, Mahidol Univ. (Thailand)
C. Soankwan, Mahidol Univ. (Thailand)

Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)

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