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Proceedings Paper

Modeling of white light emitting diodes (WLED) based on GaN/InGaN multi quantum dots structure
Author(s): A. Rostami; B. Rostami Dogolsara; H. Rasooli Saghai; M. Leilaeioun
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Paper Abstract

In this paper, we present a multi quantum dot (MQD) white light emitting Diode structure. In order to construct, white light spectrum, we use different quantum dot layers to generate blue, green and red colors. These layers contain quantum dots with active layers of In(x)Ga(1-x)N with GaN barrier. We investigate that these three colors is theoretically are extracted from each set of quantum dots, then these colors are combined with a desired intensities together and finally a light near white light will be created. Through adjusting material composition and quantum dot sizes, the white color quality can be improved. Piezoelectric and spontaneous polarization internal field are entered in our calculations.

Paper Details

Date Published: 28 November 2011
PDF: 4 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081Z (28 November 2011); doi: 10.1117/12.904405
Show Author Affiliations
A. Rostami, Univ. of Tabriz (Iran, Islamic Republic of)
B. Rostami Dogolsara, Univ. of Tabriz (Iran, Islamic Republic of)
H. Rasooli Saghai, Univ. of Tabriz (Iran, Islamic Republic of)
M. Leilaeioun, Univ. of Tabriz (Iran, Islamic Republic of)


Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI

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