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Proceedings Paper

Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling
Author(s): Wenchao Huang; Hui Xia; Shaowei Wang; Honghai Deng; Peng Wei; Lu Li; Fengqi Liu; Zhifeng Li; Tianxin Li
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Paper Abstract

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

Paper Details

Date Published: 28 November 2011
PDF: 7 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081Y (28 November 2011); doi: 10.1117/12.904389
Show Author Affiliations
Wenchao Huang, Shanghai Institute of Technical Physics (China)
Hui Xia, Shanghai Institute of Technical Physics (China)
Shaowei Wang, Shanghai Institute of Technical Physics (China)
Honghai Deng, Shanghai Institute of Technical Physics (China)
Peng Wei, Shanghai Institute of Technical Physics (China)
Lu Li, Institute of Semiconductors (China)
Fengqi Liu, Institute of Semiconductors (China)
Zhifeng Li, Shanghai Institute of Technical Physics (China)
Tianxin Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)

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