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Proceedings Paper

Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth
Author(s): Yongbo Shao; Lingjuan Zhao; Hongyan Yu; Jiaoqing Pan; Baojun Wang; Hongliang Zhu; Wei Wang
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Paper Abstract

A dual-depletion-region lumped electroabsorption modulator (DDR-LEAM) based on InP at 1550nm is designed and fabricated. The measurement results reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinction ratio. The simulation results show that the highly doped charge layer can concentrate almost all of the external applied voltage in MQW region and thus contribute to the identical extinction ratio curves. The expected 3-dB bandwidth of the DDR-LEAMs using an equivalent circuit model is more than twice lager than that of the conventional LEAM.

Paper Details

Date Published: 28 November 2011
PDF: 7 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081W (28 November 2011); doi: 10.1117/12.903970
Show Author Affiliations
Yongbo Shao, Institute of Semiconductors (China)
Lingjuan Zhao, Institute of Semiconductors (China)
Hongyan Yu, Institute of Semiconductors (China)
Jiaoqing Pan, Institute of Semiconductors (China)
Baojun Wang, Institute of Semiconductors (China)
Hongliang Zhu, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)

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