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Proceedings Paper

Structural evolution and electronic properties of [i]n[/i]-type doped hydrogenated amorphous silicon thin films
Author(s): Jian He; Wei Li; Rui Xu; Kang-Cheng Qi; Ya-Dong Jiang
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Paper Abstract

The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

Paper Details

Date Published: 17 December 2011
PDF: 10 pages
Proc. SPIE 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 831206 (17 December 2011); doi: 10.1117/12.903747
Show Author Affiliations
Jian He, Univ. of Electronic Science and Technology of China (China)
Wei Li, Univ. of Electronic Science and Technology of China (China)
Rui Xu, Univ. of Electronic Science and Technology of China (China)
Kang-Cheng Qi, Univ. of Electronic Science and Technology of China (China)
Ya-Dong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 8312:
Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III
Min Gu, Editor(s)

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