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Proceedings Paper

Pulsed lasers in photovoltaic technology
Author(s): A. Barhdadi; B. Hartiti
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Paper Abstract

Schottky diodes have been made on both n-type and p-type virgin mono-crystalline silicon processed by three kinds of pulsed lasers currently used in new photovoltaic technologies. The electrical characteristics of these diodes have been measured as a function of laser fluence. A strong change in all of their electrical parameters occurs for fluence equal or higher than a threshold at which the processed silicon surface layer turns into melt. Capacitance versus voltage measurements and DLTS analyses show that laser irradiations introduce a large density of deep levels related to active defects in the processed surface and bulk area. These defects are believed mostly generated during the fast quenching rate in pulsed laser treatments.

Paper Details

Date Published: 25 October 2011
PDF: 10 pages
Proc. SPIE 8011, 22nd Congress of the International Commission for Optics: Light for the Development of the World, 801120 (25 October 2011); doi: 10.1117/12.903376
Show Author Affiliations
A. Barhdadi, Univ. Mohammed V Agdal (Morocco)
The Abdus Salam International Ctr. for Theoretical Physics (Italy)
B. Hartiti, Univ. Mohammed V Agdal (Morocco)
Univ. Hassan II (Morocco)


Published in SPIE Proceedings Vol. 8011:
22nd Congress of the International Commission for Optics: Light for the Development of the World
Ramón Rodríguez-Vera; Ramón Rodríguez-Vera; Ramón Rodríguez-Vera; Rufino Díaz-Uribe; Rufino Díaz-Uribe; Rufino Díaz-Uribe, Editor(s)

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