Share Email Print
cover

Proceedings Paper

PL and EL characteristics in Bi- and rare earth-co-doped (La1-XGaX)2O3 phosphor thin films prepared by magnetron sputtering
Author(s): Toshihiro Miyata; Yuki Nishi; Tadatsugu Minami
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Multicolor photoluminescence (PL) and electroluminescence (EL) were observed from newly developed Bi- and rare earth (RE)-co-doped (La1-XGaX)2O3 ((La1-XGaX)2O3:Bi,RE) phosphor thin films. (La1-XGaX)2O3:Bi,RE phosphor thin films were prepared by varying the Ga content (Ga/(La+Ga) atomic ratio) or the co-doped RE content (RE/(RE+La+Ga) atomic ratio) under co-doping Bi at a constant content (Bi/(Bi+La+Ga) atomic ratio) of 3 at.% using a combinatorial r.f. magnetron sputtering deposition method. High PL intensity was obtained in postannealed (La0.9Ga0.1)2O3:Bi,RE phosphor thin films prepared with a Ga content around 10 at.%; TFEL devices fabricated using the phosphor thin films exhibited high luminance. The obtained luminance intensities in EL and PL in the phosphor thin films prepared with various contents of co-doped RE, such as Dy, Er, Eu, Tb and Tm changed considerably as the kind and content of RE were varied. Color changes from blue and blue-green to various colors in PL and EL emissions, respectively, were obtained in postannealed (La0.9Ga0.1)2O3:Bi,RE phosphor thin films, i.e., films prepared by co-doping Bi at a constant content with various REs at varying levels of content. All the observed emission peaks in PL and EL from (La0.9Ga0.1)2O3:Bi,RE phosphor thin films were assigned to either the broad emission originating from the transition in Bi3+ or the visible emission peaks originating from the transition in the co-doped trivalent RE ion.

Paper Details

Date Published: 24 December 2011
PDF: 8 pages
Proc. SPIE 8204, Smart Nano-Micro Materials and Devices, 820436 (24 December 2011); doi: 10.1117/12.903176
Show Author Affiliations
Toshihiro Miyata, Kanazawa Institute of Technology (Japan)
Yuki Nishi, Kanazawa Institute of Technology (Japan)
Tadatsugu Minami, Kanazawa Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 8204:
Smart Nano-Micro Materials and Devices
Saulius Juodkazis; Min Gu, Editor(s)

© SPIE. Terms of Use
Back to Top