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Proceedings Paper

CMOS-compatible waveguide-integrated Ge metal-semiconductor-metal photodetectors
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Paper Abstract

We demonstrate Ge metal-semiconductor-metal (MSM) photodetectors monolithically integrated with silicon-oxynitride (SiOxNy) waveguides. Ge photodetector layer was epitaxially grown by an UHVCVD system and the waveguide was formed on top of the Ge photodetector by PECVD. The entire process is found to be completely compatible with the standard CMOS process. Light is evanescently coupled from silicon-oxynitride (SiOxNy) waveguide to the underlying Ge photodetector, achieving at 2 V a responsivity of 0.33 A/W at 1.55 μm wavelength and a dark current of 1 μA for a 10 μm long photodetector.

Paper Details

Date Published: 26 October 2011
PDF: 7 pages
Proc. SPIE 8011, 22nd Congress of the International Commission for Optics: Light for the Development of the World, 80114V (26 October 2011); doi: 10.1117/12.902182
Show Author Affiliations
Juan C. Cervantes-González, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Donghwan Ahn, The Univ. of Texas at Austin (United States)
Xiaoguang Zheng, Univ. of Virginia (United States)
Sanjay K. Banerjee, The Univ. of Texas at Austin (United States)
Alfonso T. Jacome, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Joe C. Campbell, Univ. of Virginia (United States)
Ignacio E. Zaldivar-Huerta, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)


Published in SPIE Proceedings Vol. 8011:
22nd Congress of the International Commission for Optics: Light for the Development of the World

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